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Same model may have multiple batches, images only for reference.
RN1505(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1505(TE85L,F)

Part No RN1505(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1505(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Transistor Polarity 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 027449-RN1505(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1505(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 027449-RN1505(TE85L,F) is a cut reel SMD (SMT) transistor with a frequency-transition of 250MHz.

  • Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Base Resistor (R1): 2.2k ohms
  • Emitter Base Resistor (R2): 47k ohms
  • Category: Discrete Semiconductor Products
  • Case/Package: SMV
  • Current - Collector (Max): 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Power - Max: 300mW
  • Supply and Demand Status: Balanced

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5+ $14.0148 $70.0740
11+ $11.4992 $126.4912
16+ $11.1400 $178.2400
22+ $10.7808 $237.1776
28+ $10.4216 $291.8048
38+ $9.3440 $355.0720
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