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Same model may have multiple batches, images only for reference.
RN1505 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1505

Part No RN1505
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1505 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Transistor Polarity 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 183650-RN1505
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1505 CAD Model

Description

The Toshiba Semiconductor and Storage 183650-RN1505 is a dual NPN pre-biased transistor with a frequency transition of 250MHz.

  • Current - Collector (Max): 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Supply and Demand Status: Balanced
  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 183650-RN1505

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Quantity Unit Price Ext. Price
1+ $100.1096 $100.1096
2+ $96.9807 $193.9614
3+ $93.8530 $281.5590
4+ $90.7241 $362.8964
5+ $81.3397 $406.6985
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