The RN1507(TE85L,F) is a silicon epitaxial planar type switching diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for high-speed switching applications, offering a combination of low forward voltage and fast reverse recovery time. Its small package makes it suitable for compact and densely populated circuit boards.

Applications

• High-Speed Switching Circuits: Used in circuits requiring rapid switching, such as signal processing and digital logic applications.
• Small Signal Diode Applications: Employed in signal detection, rectification, and amplification circuits.
• Protection Circuits: Utilized for protecting sensitive components from voltage spikes and transient signals.
• Clipping and Clamping Circuits: Used to limit voltage levels in various electronic circuits.
• Sampling Circuits: Integrated in sampling circuits for capturing and processing analog signals.

Features

• High-Speed Switching: Offers a fast reverse recovery time for efficient switching performance.
• Low Forward Voltage: Minimizes power loss and improves circuit efficiency.
• Small Package: Available in a compact package, suitable for space-constrained applications.
• Surface Mount Device (SMD): Designed for automated assembly on printed circuit boards.
• Lead-Free Finish/RoHS Compliant: Meets environmental standards.

Benefits

• Improved Efficiency: Low forward voltage reduces power dissipation, resulting in higher efficiency.
• Enhanced Performance: Fast switching speed allows for operation in high-frequency circuits.
• Compact Design: Small package size enables integration into space-constrained applications.
• Automated Assembly: Surface mount design allows for efficient and cost-effective assembly.
• Environmentally Friendly: Lead-free finish and RoHS compliance meet environmental regulations.

Additional Details

The RN1507(TE85L,F) typically has a maximum repetitive peak reverse voltage (VRRM) of 80V and a maximum average forward current (IF(AV)) of 100mA to 200mA depending on the specific datasheet. Its low forward voltage (VF) is typically around 0.8V to 1.0V at the rated forward current. The reverse recovery time (trr) is typically in the nanosecond range, ensuring fast switching performance. The operating junction temperature range is typically from -55°C to +150°C, making it suitable for a wide range of environmental conditions. The diode is commonly available in surface-mount packages such as SOD-323, SOD-523, or similar small form factors for automated assembly.