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Same model may have multiple batches, images only for reference.
TPC6109-H(TE85L,FM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC6109-H(TE85L,FM

Part No TPC6109-H(TE85L,FM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5A VS-6
Datasheet
TPC6109-H(TE85L,FM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 12.3nC @ 10V
Max Input Capacitance 490pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 59 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1111091-TPC6109-H(TE85L,FM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC6109-H(TE85L,FM CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 1111091-TPC6109-H(TE85L,FM.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 1111091-TPC6109-H(TE85L,FM
  • Type: P-Channel MOSFET
  • Power Dissipation: 700mW (Ta)
  • Supply and Demand: Sufficient
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Operating Temperature: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V

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