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Same model may have multiple batches, images only for reference.
RN1905FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1905FE,LF(CB

Part No RN1905FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1905FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092477-RN1905FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1905FE,LF(CB CAD Model

Description

The Toshiba Semiconductor and Storage RN1905FE,LF(CB) is a dual NPN transistor with a frequency transition of 250MHz.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: Dual NPN Transistor
  • Frequency Transition: 250MHz
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Pre-Biased: Yes
  • Typical Gain: 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Low Collector-Emitter Saturation Voltage: 300mV @ 250μA, 5mA
  • Collector Cut-off Current: 500nA
  • Resistor-Base Value: 2.2k ohms
  • Resistor-Emitter Base Value: 47k ohms
  • Supply and Demand Status: Sufficient

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