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Same model may have multiple batches, images only for reference.
RN1906,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1906,LF(CT

Part No RN1906,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
RN1906,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092478-RN1906,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1906,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN1906,LF(CT) is a dual pre-biased NPN transistor that has a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: Dual Pre-Biased NPN
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Typical Gain (hFE): 80 @ 10mA and 5V
  • Package: US6
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
90+ $0.6641 $59.7690
215+ $0.5452 $117.2180
330+ $0.5290 $174.5700
455+ $0.5117 $232.8235
585+ $0.4943 $289.1655
785+ $0.4435 $348.1475
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