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Same model may have multiple batches, images only for reference.
RN1907FE,LF(CT Real Image
Same model may have multiple batches, images only for reference.

RN1907FE,LF(CT

Part No RN1907FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6 / Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN1907
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 4,000 pcs
Win Source Part Number 1383334-RN1907FE,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN1907FE,LF(CT CAD Model

Description

The RN1907FE,LF(CT) is a dual NPN bipolar transistor array from Toshiba Semiconductor and Storage.

  • Configuration: Pre-Biased
  • Mounting Type: Surface Mount
  • Power - Max: 100mW
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector (Ic) (Max): 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Frequency - Transition: 250MHz
  • Package / Case: SOT-563, SOT-666
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

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