The RN2101 is a general-purpose NPN transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in a wide range of switching and amplification applications. Its features make it suitable for various electronic circuits, including audio amplifiers, switching circuits, and signal processing.

Applications

• General purpose amplification
• Switching circuits
• Audio amplifier circuits
• Signal processing
• Driver stages

Features

• High Collector Current (Ic): Supports a maximum collector current of 200mA
• Low Saturation Voltage: Ensures efficient switching performance.
• High hFE (DC Current Gain): Provides good amplification characteristics.
• Small Surface Mount Package: Suitable for high-density circuit boards.
• Pb-free lead plating: RoHS compliant and environmentally friendly

Benefits

• Versatile component suitable for a broad range of applications.
• Efficient switching and amplification capabilities.
• Compact design enables use in small electronic devices.
• Environmentally friendly due to Pb-free plating.
• Reliable performance in various circuit designs.

Technical Specifications

The RN2101 features a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 200mA. It has a power dissipation of 300mW. The DC current gain (hFE) typically ranges from 100 to 300, depending on the specific operating conditions. The operating junction temperature ranges from -55°C to +150°C. The device is usually provided in a surface mount package such as a SOT-23 package.

In summary, the RN2101 NPN transistor from Toshiba Semiconductor and Storage is a versatile and reliable component designed for a variety of switching and amplification applications. Its good current gain, low saturation voltage, and compact size make it an excellent choice for general-purpose use in modern electronic designs.