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Same model may have multiple batches, images only for reference.
RN2115,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2115,LF(CB

Part No RN2115,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1W SSM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092491-RN2115,LF(CB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2115,LF(CB CAD Model

Description

The RN2115,LF(CB) is a PNP Pre-Biased Transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 100mA.

  • Case/Package: SSM
  • Typical Gain (hFE): 50 @ 10mA, 5V
  • Frequency Transition: 200MHz
  • Collector Cut-Off Current (Max): 500nA
  • Resistor-Base (R1): 2.2k ohms
  • Resistor-Emitter Base (R2): 10k ohms
  • Maximum Power Dissipation: 100mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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Availability: 6,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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