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Same model may have multiple batches, images only for reference.
CXT5401
Same model may have multiple batches, images only for reference.

CXT5401

Part No CXT5401
Manufacturer Yangzhou yangjie electronic co., ltd
Catalog Transistors (BJT) - Single
Description Transistors - Bipolar (BJT) - Si
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Yangzhou yangjie electronic co., ltd
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 500 mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89
Standard Package 1,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 581218-CXT5401
Ultra Librarian 3D Model Ultra Librarian CXT5401 CAD Model

Description

The 581218-CXT5401 is a PNP bipolar transistor designed for various electronic applications.

  • Category: Discrete Semiconductor Products
  • Series: Transistors - Bipolar (BJT) - Single Bipolar Transistors
  • Package: TO-243AA
  • Mounting: Tape and reel
  • Maximum Power: 500 mW
  • Maximum Collector Current: 500 mA
  • Collector-Emitter Breakdown Voltage: 150 V
  • Vce Saturation: 500mV @ 5mA, 50mA
  • DC Current Gain (hFE): 60 @ 10mA, 5V
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Yangzhou yangjie electronic co., ltd
  • Status: Active

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