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Same model may have multiple batches, images only for reference.
RN2301,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2301,LF

Part No RN2301,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W USM
Datasheet
RN2301,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 101185-RN2301,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2301,LF CAD Model

Description

This PNP transistor is manufactured by Toshiba Semiconductor and Storage and falls under the category of Discrete Semiconductor Products.

  • Package: reel
  • Mounting: SMD mounting
  • Frequency for Transition: 200MHz
  • Resistor for Base (R1) (Ohms): 4.7k
  • Resistor for Emitter Base (R2) (Ohms): 4.7k
  • Product Status: currently active
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage (VCEO): 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (max): 500nA
  • Typical Gain (hFE) (min): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: balanced

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