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RN2302,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2302,LF

Part No RN2302,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A USM
Datasheet
RN2302,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 100 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Base Product Number RN2302
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1376983-RN2302,LF
Ultra Librarian 3D Model Ultra Librarian RN2302,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN2302 is a PNP pre-biased bipolar transistor manufactured by.

  • Transistor Type: PNP Pre-Biased Bipolar
  • Mounting Type: Surface Mount
  • Package/Case: SC-70, SOT-323
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Base Resistor: 10 kOhms
  • Emitter Resistor: 10 kOhms
  • DC Current Gain: 50 @ 10mA, 5V
  • Saturation Voltage: 300mV @ 250μA, 5mA
  • Maximum Collector Cutoff Current: 500nA
  • Transition Frequency: 200MHz
  • Maximum Power Dissipation: 100mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1467 $50.6115
835+ $0.1204 $100.5340
1,290+ $0.1166 $150.4140
1,775+ $0.1129 $200.3975
2,295+ $0.1091 $250.3845
3,070+ $0.0978 $300.2460
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Availability: 23,000 pieces
MOQ: 345 pcs
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