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RN2310,LXGF

Part No RN2310,LXGF
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 835659-RN2310,LXGF
Ultra Librarian 3D Model Ultra Librarian RN2310,LXGF CAD Model

Description

The RN2310 is a silicon NPN epitaxial planar transistor designed for high-speed switching and amplifier applications. Manufactured by Toshiba Semiconductor and Storage, this transistor is commonly used in various electronic circuits requiring fast response times and efficient amplification.

Applications:

  • High-speed switching circuits
  • Amplifier circuits
  • Inverter circuits
  • Driver stages
  • Oscillator circuits

Features:

  • High transition frequency (fT) for high-speed switching.
  • Low collector output capacitance.
  • Epitaxial planar structure for enhanced reliability.
  • NPN polarity.

Benefits:

  • Improved Switching Speed: The high transition frequency enables faster switching speeds, crucial for applications demanding quick response times.
  • Enhanced Circuit Performance: The low collector output capacitance minimizes signal distortion and improves overall circuit performance.
  • Increased Reliability: The epitaxial planar structure enhances the transistor's reliability and longevity in various operating conditions.
  • Versatile Application: Suitable for a wide range of applications including switching, amplification, and oscillation circuits.

Technical Specifications:

While precise specifications depend on the exact variant (LXGF), typical parameters for RN2310 series transistors include:

  • Collector-Emitter Voltage (VCEO): Typically around 50V
  • Collector Current (IC): Typically around 0.15A
  • Power Dissipation (PC): Typically around 0.2W
  • Transition Frequency (fT): High, suitable for high-speed switching

For detailed specifications, refer to the official Toshiba datasheet for the specific RN2310,LXGF variant.

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