The RN2315 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-speed switching and amplification applications.

Applications

• High-speed switching circuits
• Amplification circuits
• Inverter circuits
• Driver stages in electronic equipment

Features

• High Collector Current (Ic = 0.2A)
• Low Collector Emitter Saturation Voltage (VCE(sat) = 0.2V (max) @ IC = 100mA)
• High Transition Frequency (fT = 180 MHz (typ.))
• Small Surface Mount Package

Benefits

• Efficient high-speed switching due to its fast switching times.
• Low power dissipation, enhancing energy efficiency in applications.
• Miniature surface mount package enables compact designs.
• Reliable performance in various electronic circuits.

Detailed Specifications

Collector-Emitter Voltage (VCEO): 50V

Collector-Base Voltage (VCBO): 60V

Emitter-Base Voltage (VEBO): 6V

Collector Current (IC): 0.2A

Collector Power Dissipation (PC): 0.2W

Junction Temperature (Tj): 150°C

Storage Temperature Range (Tstg): -55 to 150°C

The RN2315 comes in a small surface mount package, making it suitable for high-density circuit boards. It is designed to provide stable performance and long-term reliability. Its low saturation voltage minimizes power loss, making it an energy-efficient choice for portable devices and other power-sensitive applications. The high transition frequency ensures excellent performance in high-speed circuits.