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Same model may have multiple batches, images only for reference.
RN2315TE85LF Real Image
Same model may have multiple batches, images only for reference.

RN2315TE85LF

Part No RN2315TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W SC-70
Datasheet
RN2315TE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 101459-RN2315TE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2315TE85LF CAD Model

Description

The Toshiba Semiconductor and Storage RN2315TE85LF is a PNP - Pre-Biased transistor with a maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Operating Temperature: designed to operate in a temperature range of -40°C to 85°C
  • Mounting: mounted in a USM case/package
  • Usage: used in discrete semiconductor products
  • Supply and Demand Status: balanced

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