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Same model may have multiple batches, images only for reference.
RN2317(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2317(TE85L,F)

Part No RN2317(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W USM
Datasheet
RN2317(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 113856-RN2317(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2317(TE85L,F) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 113856-RN2317(TE85L,F).

  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Frequency - Transition: 200MHz
  • Transistor Polarity: PNP - Pre-Biased
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • Category: discrete semiconductor products
  • Status: currently active
  • Case / Package: USM
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: balanced
  • Additional Information: not available

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