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RN2318(TE85L,F)

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Part No	RN2318(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	RF Transistors (BJT)
Description	TRANS PREBIAS PNP 50V 0.1A USM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200 MHz
Power - Max	100 mW
Mounting	SMD (SMT)
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70
Base Product Number	RN2318
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	RN2318(TE85LF)-ND,RN2318(TE85LF)TR,RN2318(TE85LF)DKR,RN2318(TE85LF),RN2318(TE85LF)CT,RN2318TE85LF
Standard Package	3,000
Win Source Part Number	1088729-RN2318(TE85L,F)
Ultra Librarian 3D Model	Ultra Librarian RN2318(TE85L,F) CAD Model

Description

The Toshiba RN2318(TE85LF) is a PNP pre-biased transistor designed for use in discrete semiconductor products such as bipolar (BJT) single transistors.

Manufacturer: Toshiba Semiconductor and Storage
Transistor Type: PNP Pre-Biased
Package: Tape and Reel
Maximum Power: 100 mW
Voltage Collector Emitter Breakdown (Maximum): 50 V
Current Collector (Maximum): 100 mA
Vce Saturation (Maximum): 300mV @ 250μA, 5mA
Current Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum): 50 @ 10mA, 5V
Frequency Transition: 200 MHz
Package/Case: SC-70, SOT-323
Also Known As: RN2318TE85LF

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