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Same model may have multiple batches, images only for reference.
RN2409 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2409

Part No RN2409
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.2W SMINI
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 183788-RN2409
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2409 CAD Model

Description

The Toshiba Semiconductor and Storage RN2409 is a PNP pre-biased transistor with a transition frequency of 200MHz.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain: 70 @ 10mA and 5V
  • Maximum Power Dissipation: 200mW
  • Package: S-Mini package
  • Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Base Resistor (R1): 47k
  • Emitter Base Resistor (R2): 22k
  • Application: discrete semiconductor products

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Quantity Unit Price Ext. Price
2,635+ $0.0219 $57.7065
6,250+ $0.0185 $115.6250
9,375+ $0.0185 $173.4375
13,335+ $0.0173 $230.6955
16,670+ $0.0173 $288.3910
23,080+ $0.0150 $346.2000
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Availability: 18,000 pieces
MOQ: 2635 pcs
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