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RN2704JE(TE85L,F)

Part No RN2704JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ESV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 100489-RN2704JE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2704JE(TE85L,F) CAD Model

Description

The RN2704JE(TE85L,F) is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Transistor Type: Dual PNP pre-biased transistor
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Sufficient
  • Maximum Power Dissipation: 100mW
  • Maximum Current Collector: 100mA
  • Usage: Widely used in various electronic devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0658 $57.9040
2,130+ $0.0543 $115.6590
3,335+ $0.0520 $173.4200
4,550+ $0.0508 $231.1400
5,815+ $0.0497 $289.0055
7,895+ $0.0439 $346.5905
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,400 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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