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Same model may have multiple batches, images only for reference.
RN2711JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2711JE(TE85L,F)

Part No RN2711JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ESV
Datasheet
RN2711JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 1092500-RN2711JE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2711JE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 1092500-RN2711JE(TE85L,F) is an active product that belongs to the category of discrete semiconductor products.

  • Frequency Transition: 200MHz
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 100mW
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Transistor Polarity: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Typical Gain (hFE) (Min): 120 @ 1mA, 5V
  • Applications: automotive, industrial, commercial, and signaling.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1885 $59.4250
120+ $0.9748 $116.9760
185+ $0.9448 $174.7880
255+ $0.9136 $232.9680
330+ $0.8836 $291.5880
440+ $0.7923 $348.6120
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MOQ: 50 pcs
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