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Same model may have multiple batches, images only for reference.
RN2902FE,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2902FE,LF(CT

Part No RN2902FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W ES6
Datasheet
RN2902FE,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092501-RN2902FE,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2902FE,LF(CT CAD Model

Description

The electronic component with Id 425099 is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Transition Frequency: 200MHz
  • Transistor Polarity: 2 PNP - Pre-Biased (Dual)
  • Resistor Values (Base): 10k ohms
  • Resistor Values (Emitter Base): 10k ohms
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 50 @ 10mA and 5V
  • Maximum Power Dissipation: 200mW
  • Supply and Demand Status: Sufficient

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190+ $0.6087 $115.6530
295+ $0.5902 $174.1090
405+ $0.5706 $231.0930
525+ $0.5521 $289.8525
705+ $0.4943 $348.4815
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