The RN2904AFS is a P-channel MOSFET from Toshiba Semiconductor and Storage. It's designed for a variety of switching applications where a P-channel MOSFET is required. This MOSFET is characterized by its low on-resistance, which contributes to reduced power loss and improved efficiency.

Applications

• Load Switching
• Power Management Circuits
• DC-DC Converters
• Solid State Relays
• Portable Devices

Features

• Low On-Resistance (RDS(on))
• Low Gate Charge (Qg)
• Surface Mount Package (SOT-23F)
• -20V Drain-Source Voltage (VDS)
• -3A Continuous Drain Current (ID)

Benefits

• Improved power efficiency due to low on-resistance.
• Reduced switching losses due to low gate charge.
• Compact design due to small surface mount package.
• Suitable for low-voltage applications.
• Enhanced thermal performance.

The RN2904AFS P-channel MOSFET is designed to be a reliable and efficient switch for various power management applications. Its low on-resistance minimizes conduction losses, which is especially important in battery-powered devices where efficiency is critical. The SOT-23F package makes it easy to integrate into compact designs, and the low gate charge reduces the power required to drive the MOSFET, further contributing to overall system efficiency.

Technical Specifications:

• Drain-Source Voltage (VDS): -20V
• Continuous Drain Current (ID): -3A
• On-Resistance (RDS(on)): 0.085 Ohms (typical at VGS = -4.5V)
• Gate Charge (Qg): 3.5nC (typical)
• Package: SOT-23F