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Same model may have multiple batches, images only for reference.
RN2905T5LFT Real Image
Same model may have multiple batches, images only for reference.

RN2905T5LFT

Part No RN2905T5LFT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W US6
Datasheet
RN2905T5LFT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 096392-RN2905T5LFT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2905T5LFT CAD Model

Description

This is a PNP pre-biased (dual) transistor that is manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 096392-RN2905T5LFT
  • Packaging: Reel
  • Mounting Style: SMD (SMT)
  • Frequency of Transition: 200MHz
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • Case/Package: US6
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
35+ $1.8907 $66.1745
75+ $1.5512 $116.3400
120+ $1.5027 $180.3240
160+ $1.4541 $232.6560
210+ $1.4056 $295.1760
275+ $1.2601 $346.5275
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