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Same model may have multiple batches, images only for reference.
RN2910FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2910FE,LF(CB

Part No RN2910FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2910FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092504-RN2910FE,LF(CB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2910FE,LF(CB CAD Model

Description

The Toshiba Semiconductor and Storage RN2910FE,LF(CB) is a pre-biased dual PNP transistor that has a transition frequency of 200MHz and a maximum collector-emitter breakdown voltage of 50V.

  • Transition Frequency: 200MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: ES6
  • Resistor Value for Base: 4.7k ohms
  • Resistor for Emitter Base: None
  • Maximum Power Dissipation: 100mW
  • Typical Gain: 120 @ 1mA and 5V
  • Maximum Collector Current: 100mA
  • Collector Cut-off Current (max): 100nA (ICBO)
  • Packaging: Reel
  • Mounting: SMD

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