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RN2964FS

Part No RN2964FS
Manufacturer Toshiba Semiconductor and Storage
Description Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243480-RN2964FS
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2964FS CAD Model

Description

The RN2964FS is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for load switching and power management applications. This MOSFET features a low on-resistance, enabling efficient power control and minimal heat dissipation, making it suitable for portable devices and energy-efficient systems.

Applications:

  • Load switching: Used to control power to various loads in electronic circuits.
  • Power management circuits: Implemented in power supplies and battery management systems.
  • DC-DC converters: Applied in step-up and step-down voltage converters.
  • Portable electronic devices: Found in devices like smartphones, laptops, and tablets for efficient power control.
  • Motor control circuits: Utilized in small motor control applications.

Features:

  • Low on-resistance (RDS(on)): Minimizes power loss and heat generation.
  • High-speed switching: Enables quick and efficient switching operation.
  • Compact surface mount package: Facilitates high-density board mounting and miniaturization.
  • Logic level drive: Can be driven directly by logic-level signals, simplifying circuit design.
  • Avalanche ruggedness: Offers enhanced reliability and durability under inductive load conditions.

Benefits:

  • Enhanced power efficiency: Low on-resistance reduces power loss and improves overall system efficiency.
  • Improved thermal performance: Minimal heat generation allows for operation in thermally constrained environments.
  • Smaller form factor: The compact package enables the design of smaller and lighter electronic devices.
  • Simplified circuit design: Logic level drive capability reduces the need for additional driver circuitry.
  • Increased reliability: Avalanche ruggedness provides protection against voltage spikes and inductive loads.

Additional Details:

The RN2964FS's technical specifications include its drain-source voltage (VDSS), gate-source voltage (VGSS), drain current (ID), and on-resistance (RDS(on)). These parameters are critical for selecting the appropriate MOSFET for specific applications. It is typically packaged in a small surface-mount package to facilitate automated assembly. Refer to the manufacturer's datasheet for detailed specifications, application notes, and recommended operating conditions. Understanding the MOSFET's characteristics and application requirements is essential for optimizing its performance and ensuring reliable operation in electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,725+ $0.0335 $57.7875
4,170+ $0.0277 $115.5090
6,525+ $0.0266 $173.5650
9,095+ $0.0254 $231.0130
11,905+ $0.0243 $289.2915
15,790+ $0.0219 $345.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 1725 pcs
Order Increment : 1 pcs
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