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Same model may have multiple batches, images only for reference.
RN4602TE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4602TE85LF

Part No RN4602TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Datasheet
RN4602TE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 108211-RN4602TE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4602TE85LF CAD Model

Description

The supply and demand status is balanced.

  • Component Type: Dual pre-biased transistor
  • Frequency Transition: 200MHz
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Package: SM6
  • Mounting Technology: SMD (SMT)
  • Typical Gain (hFE) (Min): 50 @ 10mA, 5V

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