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RN4905T5LFT

Part No RN4905T5LFT
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS NPN/PNP PREBIAS 0.2W US6  /  Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 200mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number RN4905
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN4905T5LFTCT,RN4905T5LFTTR,RN4905(T5L,F,T),RN4905T5LFTDKR
Standard Package 3,000
Win Source Part Number 966368-RN4905T5LFT
Ultra Librarian 3D Model Ultra Librarian RN4905T5LFT CAD Model

Description

The RN4905T5LFT is a pre-biased dual transistor that has 1 NPN and 1 PNP transistor type from Toshiba Semiconductor and Storage.

  • Maximum Power: 200mW
  • Maximum Voltage: 50V
  • Current - Collector (Ic) (Max): 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Frequency Transition: 200MHz
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
  • Temperature Range: -55°C ~ 125°C
  • ECCN: EAR99

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