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Same model may have multiple batches, images only for reference.
RN49A1(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN49A1(T5L,F,T)

Part No RN49A1(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 101958-RN49A1(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN49A1(T5L,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage RN49A1(T5L,F,T) is a pre-biased dual NPN and PNP transistor.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Frequency Transition: 200MHz
  • Typical Gain: 80 @ 10mA and 5V
  • Maximum Power Dissipation: 200mW
  • Collector Cut-Off Current: 100nA
  • Packaged: US6 case
  • Mounted: SMD (SMT)
  • Resistor Base (R1): 2.2k ohms
  • Resistor Emitter Base (R2): 47k ohms
  • Status: obsolete (EOL) but still available in the market

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