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SRF1619NAC31-TB12R

Part No SRF1619NAC31-TB12R
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (S)
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 340168-SRF1619NAC31-TB12R
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SRF1619NAC31-TB12R CAD Model

Description

The SRF1619NAC31-TB12R is a high-performance Schottky Barrier Diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for applications requiring high efficiency and fast switching speeds. It's commonly used in switched-mode power supplies (SMPS), DC-DC converters, and other power electronics where minimizing power loss is crucial. The SRF1619NAC31-TB12R offers a low forward voltage drop and a high surge current capability, making it ideal for demanding power applications.

Applications

  • Switched-Mode Power Supplies (SMPS): Secondary rectification in SMPS circuits.
  • DC-DC Converters: Output rectification in DC-DC conversion.
  • Freewheeling Diodes: Used as freewheeling diodes to protect inductive loads.
  • Polarity Protection: Providing reverse polarity protection in electronic circuits.

Features

  • Low Forward Voltage Drop: Minimizes power loss and improves efficiency.
  • High Surge Current Capability: Withstands high surge currents during operation.
  • Fast Switching Speed: Ensures efficient performance in high-frequency applications.
  • Compact Package: Allows for high-density circuit designs.

Benefits

  • Increased Efficiency: Reduces power consumption in electronic devices.
  • Lower Heat Dissipation: Minimizes the need for heat sinks and cooling systems.
  • Improved System Reliability: Provides stable and reliable operation.
  • Reduced Size and Weight: Enables smaller and lighter electronic devices.

Additional Details

The SRF1619NAC31-TB12R typically has a repetitive peak reverse voltage around 100V. Its forward current rating is usually around 16A. The device is generally available in a surface mount package suitable for automated assembly processes. The operating temperature range is usually from -40°C to +150°C, but specific values depend on the manufacturer's datasheet. The diode's low reverse leakage current contributes to higher energy efficiency. Toshiba's SRF series of Schottky barrier diodes are designed to meet the demands of modern power electronics, offering an ideal balance of performance and reliability.

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