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Same model may have multiple batches, images only for reference.
SSM3J108TU(TE85L) Real Image
Same model may have multiple batches, images only for reference.

SSM3J108TU(TE85L)

Part No SSM3J108TU(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.8A UFM
Datasheet
SSM3J108TU(TE85L) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 250pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 158 mOhm @ 800mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 1102284-SSM3J108TU(TE85L)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J108TU(TE85L) CAD Model

Description

The SSM3J108TU(TE85L) is a P-channel MOSFET from Toshiba Semiconductor and Storage.

  • Maximum Power Dissipation: 500mW
  • Operating Temperature Range: Up to 150°C
  • Mounting Type: Surface-Mounted
  • Package: UFM with 3-SMD Flat Leads
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.8A @ 25°C
  • Maximum Rds On: 158 mOhm @ 800mA and 4V
  • Product Status: Obsolete (EOL)
  • Popularity Rating: Medium
  • Supply and Demand Status: Sufficient

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