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Same model may have multiple batches, images only for reference.
SSM3J129TU Real Image
Same model may have multiple batches, images only for reference.

SSM3J129TU

Part No SSM3J129TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.6A UFM
Datasheet
SSM3J129TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 8.1nC @ 4.5V
Max Input Capacitance 640pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 46 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 192871-SSM3J129TU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J129TU CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J129TU is a P-channel MOSFET with a power dissipation of 500mW (Ta).

  • Power Dissipation: 500mW (Ta)
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.6A (Ta)
  • Maximum Rds On: 46 mOhm @ 3A, 4.5V
  • Popularity: Medium
  • Supply and Demand: sufficient
  • Packaging: reel - TR
  • Case/Package: UFM with dimensions of 3-SMD, flat leads
  • Temperature Range: 150 degrees Celsius (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1305 $58.0725
1,080+ $0.1074 $115.9920
1,670+ $0.1040 $173.6800
2,300+ $0.1005 $231.1500
2,945+ $0.0982 $289.1990
3,950+ $0.0878 $346.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,000 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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