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SSM3J15FU,LF

Part No SSM3J15FU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 0.1A USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Gate-Source Threshold Voltage 1.7V @ 100μA
Max Input Capacitance 9.1pF @ 3V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 12 Ohm @ 10mA, 4V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package USM
Dimension SC-70, SOT-323
Win Source Part Number 096324-SSM3J15FU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J15FU,LF CAD Model

Description

The SSM3J15FU,LF is a MOSFET component manufactured by Toshiba Semiconductor and Storage. This component has a P-Channel polarity and a maximum drain-source breakdown voltage of 30V. This component is ideal for applications that require reliable and high-quality MOSFET components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1637 $50.7470
745+ $0.1344 $100.1280
1,155+ $0.1302 $150.3810
1,590+ $0.1260 $200.3400
2,055+ $0.1218 $250.2990
2,750+ $0.1092 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,800 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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