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Same model may have multiple batches, images only for reference.
SSM3J15FV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J15FV,L3F

Part No SSM3J15FV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 0.1A VESM
Datasheet
SSM3J15FV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Gate-Source Threshold Voltage 1.7V @ 100μA
Max Input Capacitance 9.1pF @ 3V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 12 Ohm @ 10mA, 4V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package VESM
Dimension SOT-723
Win Source Part Number 097188-SSM3J15FV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J15FV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage 097188-SSM3J15FV,L3F is a P-Channel MOSFET with a VESM package and a drain-source breakdown voltage of 30V. The surface mount SOT-723 package is supplied on a reel. This MOSFET is suitable for use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
795+ $0.0630 $50.0850
1,935+ $0.0517 $100.0395
2,995+ $0.0501 $150.0495
4,125+ $0.0485 $200.0625
5,335+ $0.0469 $250.2115
7,145+ $0.0420 $300.0900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,840 pieces
MOQ: 795 pcs
Order Increment : 1 pcs
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