SSM3J325F,LF

Part No SSM3J325F,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A S-MINI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Max Gate Charge 4.6nC @ 4.5V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 030881-SSM3J325F,LF
Popularity Medium
Supply and Demand Status Balance

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 030881-SSM3J325F,LF. It comes in reel packaging and has SMD (SMT) mounting style. It is a MOSFET (P-Channel) component with a maximum power dissipation of 600mW (Ta) and a continuous drain current of 2A (Ta). The supply and demand status is balanced.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
490+ $0.1025 $50.2250
1,045+ $0.0959 $100.2155
1,620+ $0.0926 $150.0120
2,330+ $0.0860 $200.3800
3,025+ $0.0827 $250.1675
3,780+ $0.0794 $300.1320
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 21,000 pieces
MOQ: 490 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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