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SSM3J36TU,LF

Part No SSM3J36TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 10 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3J36
Other Names SSM3J36TULFTR,SSM3J36TULFDKR,SSM3J36TU,LF(B,SSM3J36TULFCT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277960-SSM3J36TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3J36TU,LF CAD Model

Description

The SSM3J36TU,LF is a P-Channel MOSFET transistor that belongs to the Discrete Semiconductor Products category. It is manufactured by Toshiba Semiconductor and Storage.

  • Package: Tape and reel
  • Standard Packages: 3,000
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 330mA (Ta)
  • Maximum Rds On: 1.31Ohm @ 100mA, 4.5V
  • Vgs(th): 1V @ 1mA
  • Gate Charge (Qg): 1.2 nC @ 4V
  • Input Capacitance (Ciss): 43 pF @ 10Vds
  • Maximum Power Dissipation: 800mW
  • Temperature Range: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1747 $50.6630
700+ $0.1433 $100.3100
1,080+ $0.1389 $150.0120
1,490+ $0.1344 $200.2560
1,925+ $0.1299 $250.0575
2,580+ $0.1165 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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