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Same model may have multiple batches, images only for reference.
SSM3K127TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K127TU,LF

Part No SSM3K127TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Rds On (Max) @ Id, Vgs 123mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 123 pF @ 15 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3K127
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1314757-SSM3K127TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K127TU,LF CAD Model

Description

The SSM3K127TU,LF N-Channel MOSFET from Toshiba Semiconductor and Storage is a high-performance transistor designed for use in electronic devices.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 2A (Ta)
  • On-Resistance: 123mOhm @ 1A, 4V
  • Gate Threshold Voltage: 1V @ 1mA
  • Power Dissipation: 500mW (Ta)
  • Mounting Technology: Surface Mount
  • Gate Charge: 1.5nC @ 4V
  • Input Capacitance: 123pF @ 15V
  • Maximum Gate-Source Voltage: ±12V
  • Operating Temperature: 150°C
  • ECCN: EAR99
  • HTSUS Code: 8541.21.0095

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