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SSM3K16CTC,L3F

Part No SSM3K16CTC,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 200MA CST3C  /  N-Channel 20 V 200mA (Ta) 500mW (Ta) Surface Mount CST3C
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 12 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package CST3C
Package / Case SC-101, SOT-883
Base Product Number SSM3K16
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM3K16CTC,L3F(B,SSM3K16CTCL3FCT,SSM3K16CTCL3FTR,SSM3K16CTCL3F(B,SSM3K16CTCL3F,SSM3K16CTCL3FDKR
Standard Package 10,000
Win Source Part Number 972694-SSM3K16CTC,L3F
Ultra Librarian 3D Model Ultra Librarian SSM3K16CTC,L3F CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K16CTC,L3F is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products, specifically in FETs, MOSFETs - Single applications.

  • Package: tape and reel
  • Standard Package: 10,000
  • Mounting Technology: surface mount
  • Maximum Power Dissipation: 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Input capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
  • Vgs (Max): ±10V
  • Temperature Range: 150°C
  • ECCN: EAR99
  • Description: It is an excellent choice for use in electronic devices and systems that require high-performance MOSFET transistors.

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