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SSM3K309T(TE85L,F)

Part No SSM3K309T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.7A TSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Max Input Capacitance 1020pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 31 mOhm @ 4A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 106535-SSM3K309T(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K309T(TE85L,F) CAD Model

Description

The electronic component with Id 348520 is a Toshiba Semiconductor and Storage MOSFET product with the Win Source Part Number 106535-SSM3K309T(TE85L,F).

  • Packaging: reel - TR
  • Mounting: SMD (SMT) technology
  • Polarity: N-Channel
  • Power dissipation: 700mW (Ta)
  • Category: Discrete Semiconductor Products
  • Drive voltage: 1.8V, 4V for max Rds On and min Rds On
  • Status: obsolete (EOL)
  • Operating temperature range: 150°C (TJ)
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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