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Same model may have multiple batches, images only for reference.
SSM3K318R,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K318R,LF

Part No SSM3K318R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.5A TSM
Datasheet
SSM3K318R,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 235pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 107 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 1102297-SSM3K318R,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K318R,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K318R,LF MOSFET is a N-channel power MOSFET.

  • Maximum Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 2.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 107 mOhm @ 2A, 10V
  • Package: SOT-23F with SOT-23-3 flat leads
  • Ideal For: Power supplies, DC-DC converters, and battery protection circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
675+ $0.0741 $50.0175
1,645+ $0.0608 $100.0160
2,550+ $0.0589 $150.1950
3,510+ $0.0570 $200.0700
4,540+ $0.0551 $250.1540
6,075+ $0.0494 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 58,050 pieces
MOQ: 675 pcs
Order Increment : 1 pcs
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