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SSM3K59CTB,L3F

Part No SSM3K59CTB,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 2A CST3B / Trans MOSFET N-CH Si 40V 2A 3-Pin CST-B T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVII-H
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V
Vgs(th) (Maximum) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 1.1nC @ 4.2V
Input Capacitance (Ciss) (Maximum) @ Vds 130pF @ 10V
Vgs (Maximum) ±12V
Power Dissipation (Maximum) 1W (Ta)
Rds On (Maximum) @ Id, Vgs 215 mOhm @ 1A, 8V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package CST3B
Package 3-SMD, No Lead
Win Source Part Number 795460-SSM3K59CTB,L3F
Popularity Medium
Supply and Demand Status Limited
Family Name SSM3K59CTB
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian SSM3K59CTB,L3F CAD Model

Description

The SSM3K59CTB,L3F is an N-channel MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for low-voltage switching applications, offering low on-resistance and fast switching speeds. It is commonly used in load switches, DC-DC converters, and portable devices.

Applications

  • Load switches
  • DC-DC converters
  • Power management in portable devices
  • LED drivers
  • Small signal switching

Features

  • Low on-resistance (RDS(ON))
  • Low gate charge (Qg)
  • Fast switching speed
  • Small surface mount package
  • RoHS compliant

Benefits

  • Reduced power loss and improved efficiency due to low on-resistance.
  • Faster switching speeds for enhanced system performance.
  • Compact design ideal for space-constrained applications.
  • Improved thermal characteristics due to efficient heat dissipation.
  • Compliance with environmental regulations.

Additional Details

The SSM3K59CTB,L3F has a maximum drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 3A. It is packaged in a small SOT-23 package for surface mounting. The low gate charge contributes to its fast switching performance. The device's low on-resistance minimizes power dissipation, making it suitable for energy-efficient designs. The L3F suffix indicates specific packaging and material characteristics relevant to RoHS compliance and soldering processes.

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