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SSM6J213FE Toshiba Semiconductor and Storage SSM6J213FE Real Image SSM6J213FE real image
Same model may have multiple batches, images only for reference.
SSM6J213FE Toshiba Semiconductor and Storage SSM6J213FE Real Image SSM6J213FE real image
SSM6J213FE Toshiba Semiconductor and Storage SSM6J213FE Real Image SSM6J213FE real image
Same model may have multiple batches, images only for reference.

SSM6J213FE

Part No SSM6J213FE
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 20V 2.6A ES6
Datasheet
SSM6J213FE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 4.7nC @ 4.5V
Max Input Capacitance 290pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 103 mOhm @ 1.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6
Dimension SOT-563, SOT-666
Win Source Part Number 097687-SSM6J213FE
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SSM6J213FE
Introduction Date December 20, 2010
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SSM6J213FE CAD Model

Description

The Toshiba SSM6J213FE is a p-channel MOSFET electronic component with a maximum power dissipation of 500mW.

  • Mounting: surface mount device (SMD)
  • Dimensions: SOT-563 and SOT-666
  • Category: discrete semiconductor products
  • Status: active
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.6A
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Max Gate Charge: 4.7nC @ 4.5V
  • Maximum Input Capacitance: 290pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id, Vgs: 103 mOhm @ 1.5A, 4.5V
  • Supply and demand status: balanced
  • Estimated EOL date: 2027

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Quantity Unit Price Ext. Price
335+ $0.1507 $50.4845
810+ $0.1237 $100.1970
1,255+ $0.1198 $150.3490
1,725+ $0.1160 $200.1000
2,235+ $0.1121 $250.5435
2,990+ $0.1005 $300.4950
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