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SSM6J53FE(TE85L,F)

Part No SSM6J53FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.8A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 2.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 10.6nC @ 4V
Max Input Capacitance 568pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 136 mOhm @ 1A, 2.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Dimension SOT-563, SOT-666
Win Source Part Number 103413-SSM6J53FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6J53FE(TE85L,F) CAD Model

Description

The SSM6J53FE(TE85L,F) is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It's designed for a variety of power management applications, focusing on efficiency and miniaturization. Its key characteristics include low on-resistance and fast switching speeds, making it suitable for portable devices and other low-power systems.

Applications

  • Load switching in portable devices
  • Power management in battery-powered systems
  • DC-DC converters
  • Battery protection circuits

Features

  • P-Channel MOSFET
  • Low On-Resistance (RDS(ON))
  • Fast Switching Speed
  • Small Surface Mount Package
  • Low Threshold Voltage
  • Lead-Free Plating

Benefits

  • High Efficiency: Low RDS(ON) minimizes power loss and increases battery life in portable devices.
  • Fast Switching: Enables quick response times in power management circuits.
  • Space Saving: Small surface mount package allows for compact designs.
  • Simplified Circuit Design: Low threshold voltage allows for direct drive from logic-level signals.
  • Environmentally Friendly: Lead-free plating ensures compliance with environmental regulations.
  • Reliable Operation: Toshiba's manufacturing quality ensures consistent performance.

Additional Details

The SSM6J53FE(TE85L,F) is supplied in a small surface mount package, optimizing board space usage. The 'TE85L,F' suffix indicates tape and reel packaging for automated assembly and lead-free finish. The low gate threshold voltage allows for direct logic level driving, which simplifies the driver circuit design. The device is designed to operate efficiently at relatively low voltages. The MOSFET is useful in power switching and load switching where size and efficiency are paramount. This makes it suitable for use in applications where space is at a premium and power efficiency is critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,400 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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