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Same model may have multiple batches, images only for reference.
SSM6K211FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6K211FE,LF

Part No SSM6K211FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.2A ES6
Datasheet
SSM6K211FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 10.8nC @ 4.5V
Max Input Capacitance 510pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 47 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Dimension SOT-563, SOT-666
Win Source Part Number 101360-SSM6K211FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6K211FE,LF CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 101360-SSM6K211FE,LF.

  • Packaging: reel
  • Mounting: SMD (SMT) technology
  • Type: MOSFET with N-Channel polarity
  • Maximum Power Dissipation: 500mW (Ta)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 1.5V and 4.5V for Max Rds On and Min Rds On respectively
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
25+ $2.3735 $59.3375
60+ $1.9473 $116.8380
92+ $1.8861 $173.5212
127+ $1.8261 $231.9147
164+ $1.7648 $289.4272
219+ $1.5824 $346.5456
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