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SSM6K403TU,LF

Part No SSM6K403TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.2A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 16.8nC @ 4V
Max Input Capacitance 1050pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 3A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UF6
Dimension 6-SMD, Flat Leads
Win Source Part Number 109278-SSM6K403TU,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6K403TU,LF CAD Model

Description

The SSM6K403TU,LF is an N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Mounting: surface mount device
  • Case/Package: UF6
  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.2A
  • Maximum Rds On: 28 mOhm @ 3A and 4V
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 16.8nC @ 4V
  • Suitable for: use in various applications such as power supplies, DC-DC converters, and motor control circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2020 $50.5000
605+ $0.1658 $100.3090
935+ $0.1606 $150.1610
1,290+ $0.1554 $200.4660
1,665+ $0.1502 $250.0830
2,230+ $0.1347 $300.3810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,940 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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