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Same model may have multiple batches, images only for reference.
SSM6L09FUTE85LF Real Image
Same model may have multiple batches, images only for reference.

SSM6L09FUTE85LF

Part No SSM6L09FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 0.4A/0.2A US6
Datasheet
SSM6L09FUTE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 400mA, 200mA
Maximum Rds On at Id,Vgs 700 mOhm @ 200MA, 10V
Gate-Source Threshold Voltage 1.8V @ 100μA
Max Input Capacitance 20pF @ 5V
Maximum Power Dissipation 300mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 111345-SSM6L09FUTE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6L09FUTE85LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6L09FUTE85LF is a N and P-channel FET that is designed for logic level gate applications.

  • Supply and demand status: balanced
  • Maximum Power Dissipation: 300mW
  • Operating Temperature: up to 150°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 1.8V @ 100μA
  • Features: small form factor and high performance
  • Choice: excellent choice for a variety of electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
400+ $0.1257 $50.2800
970+ $0.1032 $100.1040
1,500+ $0.1000 $150.0000
2,070+ $0.0967 $200.1690
2,675+ $0.0935 $250.1125
3,580+ $0.0838 $300.0040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 400 pcs
Order Increment : 1 pcs
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