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Same model may have multiple batches, images only for reference.
SSM6L13TU(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6L13TU(T5L,F,T)

Part No SSM6L13TU(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET ARRAY N/P-CH 20V UF6
Datasheet
SSM6L13TU(T5L,F,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.8V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA (Ta)
Maximum Rds On at Id,Vgs 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 268pF @ 10V, 250pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UF6
Win Source Part Number 1102321-SSM6L13TU(T5L,F,T)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6L13TU(T5L,F,T) CAD Model

Description

The SSM6L13TU(T5L,F,T) is a logic level gate N and P-channel FET manufactured by Toshiba Semiconductor and Storage.

  • Designed for: use in discrete semiconductor products
  • Maximum Power Dissipation: 500mW
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Input Capacitance: 268pF @ 10V
  • Package: UF6 case
  • Operating Temperature Range: up to 150°C
  • Status: obsolete and has limited supply and demand

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