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Same model may have multiple batches, images only for reference.
SSM6N35AFU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N35AFU,LF

Part No SSM6N35AFU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V
Power - Max 285mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number SSM6N35
Other Names SSM6N35AFU,LF(B,SSM6N35AFULF,SSM6N35AFULF,SSM6N35AFULF(B,SSM6N35AFULFTR,SSM6N35AFULFDKR,SSM6N35AFU,LF(T,SSM6N35AFULFCT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278545-SSM6N35AFU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6N35AFU,LF CAD Model

Description

The 1278545-SSM6N35AFU,LF from Toshiba Semiconductor and Storage is a dual n-channel MOSFET transistor.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 250mA @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100μA
  • Maximum Power: 285mW (Ta)
  • Gate Charge: 0.34nC @ 4.5V
  • Input Capacitance: 36pF @ 10V
  • Operating Temperature: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3695 $59.1200
385+ $0.3032 $116.7320
590+ $0.2938 $173.3420
815+ $0.2843 $231.7045
1,055+ $0.2748 $289.9140
1,410+ $0.2464 $347.4240
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Availability: 320 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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