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Same model may have multiple batches, images only for reference.
TC58BVG0S3HBAI4 Real Image
Same model may have multiple batches, images only for reference.

TC58BVG0S3HBAI4

Part No TC58BVG0S3HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog EEPROM
Description IC EEPROM 1GBIT 25NS 63FBGA
Datasheet
TC58BVG0S3HBAI4 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Status Active
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 1Gb (128M x 8)
Access Time 25ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating -40°C to 85°C (TA)
Mounting SMD (SMT)
Case / Package 63-TFBGA (9x11)
Win Source Part Number 1106019-TC58BVG0S3HBAI4
Popularity Medium
Supply and Demand Status Balance
Quantity per package 210
Ultra Librarian 3D Model Ultra Librarian TC58BVG0S3HBAI4 CAD Model

Description

The Toshiba Semiconductor and Storage TC58BVG0S3HBAI4 is an EEPROM-NAND integrated circuit.

  • Memory Size: 1Gb (128M x 8)
  • Access Time: 25ns
  • Supply Voltage Range: 2.7 V to 3.6 V
  • Temperature Range: -40°C to 85°C (TA)
  • Mounting: 63-TFBGA (9x11) package
  • Category: Integrated circuits
  • Market Status: Currently active
  • Supply and Demand Status: Balanced
  • Package Contains: 210 pieces
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.3775 $56.8875
11+ $9.3354 $102.6894
17+ $9.0437 $153.7429
23+ $8.7519 $201.2937
30+ $8.4602 $253.8060
40+ $7.5850 $303.4000
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 4,200 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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