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TC58FVM6T2AFT65

Part No TC58FVM6T2AFT65
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1264756-TC58FVM6T2AFT65
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC58FVM6T2AFT65 CAD Model

Description

The TC58FVM6T2AFT65 is a NAND Flash memory device manufactured by Toshiba Semiconductor and Storage. It's a high-density, non-volatile memory solution used in a wide range of applications requiring reliable data storage.

Applications

  • Solid State Drives (SSDs): Used as the primary storage medium in SSDs for computers and servers.
  • Embedded Systems: Integrated into embedded systems for storing firmware, configuration data, and user data.
  • Mobile Devices: Found in smartphones, tablets, and other mobile devices for storing applications, photos, videos, and other data.
  • USB Flash Drives: Used in USB flash drives for portable data storage.
  • Memory Cards: Employed in memory cards (e.g., SD cards, microSD cards) for cameras, camcorders, and other devices.

Features

  • NAND Flash Technology: Provides high-density, non-volatile storage.
  • Multi-Level Cell (MLC) Technology: Stores multiple bits per cell, increasing storage density.
  • High-Speed Interface: Supports fast data transfer rates.
  • Low Power Consumption: Optimizes power usage for battery-powered applications.
  • Error Correction Code (ECC): Implements ECC to ensure data integrity.
  • Operating Temperature Range: Designed to operate over a wide temperature range.

Benefits

  • High Storage Capacity: Provides a large amount of storage in a small form factor.
  • Fast Data Access: Enables fast data read and write speeds.
  • Reliable Data Storage: ECC ensures data integrity and prevents data loss.
  • Low Power Consumption: Extends battery life in portable devices.
  • Durable: Resistant to shock and vibration.

Additional Details

The TC58FVM6T2AFT65 utilizes advanced NAND flash technology to achieve high storage density and performance. The MLC technology allows for storing multiple bits of data in each memory cell, which significantly increases the storage capacity. The device incorporates ECC to detect and correct errors, ensuring data integrity over time. Its high-speed interface provides fast data transfer rates, improving overall system performance. The low power consumption makes it suitable for battery-powered applications. The TC58FVM6T2AFT65 is available in a compact package, allowing for easy integration into various electronic devices. It meets industry standards for reliability and performance. Toshiba is a leading manufacturer of NAND flash memory, and the TC58FVM6T2AFT65 is a representative of their commitment to innovation and quality in the field of data storage. The specific parameters for storage capacity vary depending on the exact model and configuration, and datasheet specifications should be checked for that data.

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