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Same model may have multiple batches, images only for reference.
TC58NVG0S3HBAI4 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TC58NVG0S3HBAI4

Part No TC58NVG0S3HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description NAND Flash Memory(SLC Middle Capacity) | IC FLASH 1G PARALLEL 63TFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Memory America, Inc.
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Manufacturer Pack Quantity 210
MSL Level 3 (168 Hours)
Win Source Part Number 1264760-TC58NVG0S3HBAI4
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC58NVG0S3HBAI4 CAD Model

Description

The Toshiba Memory America, Inc. TC58NVG0S3HBAI4 is a NAND (SLC) flash memory integrated circuit that has a memory size of 1Gb (128M x 8).

  • Memory Size: 1Gb (128M x 8)
  • Supply Voltage: 2.7V ~ 3.6V
  • Mounting: SMD technology
  • Package: 63-TFBGA (9x11)
  • Write Cycle Time: 25ns
  • Memory Interface: parallel
  • Temperature Range: -40°C ~ 85°C

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Quantity Unit Price Ext. Price
8+ $7.0747 $56.5976
16+ $6.6269 $106.0304
24+ $6.4030 $153.6720
34+ $5.9553 $202.4802
44+ $5.7314 $252.1816
55+ $5.5075 $302.9125
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